Local Hanle-effect studies of spin drift and diffusion in n:GaAs epilayers and spin-transport devices

New Journal of Physics

Volumn 9, Issue , 2007, Pages

  Furis, M ^a,d   Smith, D L ^b   Kos, S ^b,e   Garlid, E S ^c   Reddy, K S M ^c   Palmstrom C J ^c   Crowell, P A ^c   Crooker, S A ^a  

^a LOS ALAMOS NATIONAL LABORATORY   (United States)

^b LOS ALAMOS NATIONAL LABORATORY   (United States)

^c University of Minnesota   (United States)

^d University of Vermont   (United States)

^e UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

DRIFT VELOCITY; ELECTRON SPIN DISTRIBUTIONS; SPIN DRIFT; SPIN-ORBIT COUPLING; SPIN-TRANSPORT DEVICES;

DIFFUSION; EPILAYERS; MAGNETIC FIELDS; MAGNETOELECTRONICS; MICROSCOPIC EXAMINATION;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 34848837601     PISSN: 13672630     EISSN: None     Source Type: Journal    
DOI: 10.1088/1367-2630/9/9/347     Document Type: Article

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