Bias-dependent electron spin lifetimes in n-GaAs and the role of donor impact ionization

Applied Physics Letters

Volumn 89, Issue 10, 2006, Pages

  Furis, M ^a   Smith, D L ^a   Crooker, S A ^a   Reno, J L ^b  

^a LOS ALAMOS NATIONAL LABORATORY   (United States)

^b SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DYAKONOV-PEREL SPIN RELAXATION; ELECTRON SPIN LIFETIME; ELECTRON SPIN TRANSPORT; HANLE EFFECT; MAGNETO-OPTICAL KERR ROTATION;

ELECTRIC FIELD EFFECTS; ELECTRIC POTENTIAL; ELECTRON ENERGY LEVELS; ELECTRONS; IMPACT IONIZATION; KERR ELECTROOPTICAL EFFECT; LOW TEMPERATURE EFFECTS; METAL INSULATOR TRANSITION;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 33748495593     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2345608     Document Type: Article

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