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Volumn , Issue , 2007, Pages 501-504

Design of a family of sleep transistor cells for a clustered power-gating flow in 65nm technology

Author keywords

Insertion; Layout; Leakage power; Sleep transistor; Standard cell

Indexed keywords

CMOS INTEGRATED CIRCUITS; INTEGRATED CIRCUIT LAYOUT; LEAKAGE CURRENTS; NANOELECTRONICS; OPTIMIZATION;

EID: 34748903744     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1145/1228784.1228903     Document Type: Conference Paper
Times cited : (17)

References (8)
  • 1
    • 33646864552 scopus 로고    scopus 로고
    • Leakage Current Mechanisms and Leakage Reduction Techniques in Deep-Submicrometer CMOS Circuits
    • K. Roy, S. Mukhopadhyay, H. Mahmoodi-Meimand, "Leakage Current Mechanisms and Leakage Reduction Techniques in Deep-Submicrometer CMOS Circuits", Proceedings of the IEEE, Vol. 91, No. 2, pp. 305-327, 2003.
    • (2003) Proceedings of the IEEE , vol.91 , Issue.2 , pp. 305-327
    • Roy, K.1    Mukhopadhyay, S.2    Mahmoodi-Meimand, H.3
  • 2
    • 28444449755 scopus 로고    scopus 로고
    • Standby and Active Leakage Current Control and Minimization in CMOS VLSI Circuits
    • F. Fallah, M. Pedram, "Standby and Active Leakage Current Control and Minimization in CMOS VLSI Circuits," IEICE Transactions on Electronics,Vol. E88-C, No 4, pp.509-519, 2005.
    • (2005) IEICE Transactions on Electronics , vol.E88-C , Issue.4 , pp. 509-519
    • Fallah, F.1    Pedram, M.2
  • 7
    • 34748835955 scopus 로고    scopus 로고
    • STMicroelectronics CORE65LPSVT_1.00V 4.0 Standard Cell Library User Manual & Data Book.
    • STMicroelectronics CORE65LPSVT_1.00V 4.0 Standard Cell Library User Manual & Data Book.
  • 8
    • 34748825714 scopus 로고    scopus 로고
    • STM 65nm Design Kit, C65-DRM rev. D, March 2006, Internal Reference Documentation, STMicrolectronics, FTM, Crolles, France.
    • STM 65nm Design Kit, C65-DRM rev. D, March 2006, Internal Reference Documentation, STMicrolectronics, FTM, Crolles, France.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.