High-power submicron InP D-HBT push-push oscillators operating up to 215 GHz

Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC

Volumn , Issue , 2005, Pages 208-211

  Baeyens, Y ^a   Weimann, N ^a   Houtsma, V ^a   Weiner, J ^a   Yang, Y ^a   Frackoviak, J ^a   Tate, A ^a   Chen, Y K ^a  

^a LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

OSCILLATORS (ELECTRONIC); SEMICONDUCTING INDIUM COMPOUNDS; TOPOLOGY;

COLLECTOR NODES; COLPITTS OSCILLATOR; PUSH-PUSH OSCILLATORS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 30944455103     PISSN: 15508781     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/CSICS.2005.1531814     Document Type: Conference Paper

References (10)

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2. S. Kudszus et al., "Push-push oscillators for 94 and 140 GHz applications using standard pseudomorphic GaAs HEMTs", 2001 IEEE MTT-S International Microwave Symposium Digest, pp. 1571-1574, Vol. 3, 2001.
3. K. Kobayashi et al., "A 108-GHz InP-HBT monolithic push-push VCO with low phase noise and wide tuning bandwidth", IEEE Journal of Solid-State Circuits, Vol. 34, No. 9, pp. 1225-1232, Sept. 1999.
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8. H. Li, H. Rein, "Millimeter-wave VCOs with wide tuning range and low phase noise, fully integrated in a SiGe bipolar production technology", IEEE Journal of Solid-State Circuits, Vol. 38, Issue 2, pp. 184-191, Feb. 2003 Page(s):184-191
9. N. Weimann et al., "InP Double-Hetero Bipolar Transistor Technology for 130 GHz clock speed", To be presented at The International Symposium on Compound Semiconductors (ISCS), Rust, Germany, September 18-22, 2005
10. Rosenbaum et al., "155- and 213-GHz AlInAs/GaInAs/InP HEMT MMIC oscillators", IEEE Trans. On Microwave Theory and Techniques, Vol. 43, Issue 4, pp. 927-932, April 1995.