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Volumn , Issue , 2007, Pages 1787-1790

Ultra-low-power X-band SiGe HBT low-noise amplifiers

Author keywords

Heterojunction bipolar transistor (HBT); Low noise amplifier (LNA); Low power; Noise figure

Indexed keywords

BANDWIDTH; BICMOS TECHNOLOGY; ELECTRIC POWER UTILIZATION; HETEROJUNCTION BIPOLAR TRANSISTORS; NOISE FIGURE;

EID: 34748857969     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MWSYM.2007.380094     Document Type: Conference Paper
Times cited : (15)

References (8)
  • 1
    • 33748352564 scopus 로고    scopus 로고
    • A Low-Power, X-band SiGe HBT Low-Noise Amplifier for near-Space Radar Applications
    • September
    • W.-M L. Kuo and al, "A Low-Power, X-band SiGe HBT Low-Noise Amplifier for near-Space Radar Applications," IEEE Microwave and wireless components letters, vol 16, no. 9, pp520-522, September 2006.
    • (2006) IEEE Microwave and wireless components letters , vol.16 , Issue.9 , pp. 520-522
    • Kuo, W.-M.L.1    and al2
  • 2
    • 0242468147 scopus 로고    scopus 로고
    • A Novel Bipolar-MOSFET Low-Noise Amplifier (BiFET LNA), Circuit configuration, design methodology, and chip implementation
    • November
    • Pingwi Ma and al, "A Novel Bipolar-MOSFET Low-Noise Amplifier (BiFET LNA), Circuit configuration, design methodology, and chip implementation," IEEE transaction on MTT, vol. 51, no. 11, pp. 2175-2180, November 2003.
    • (2003) IEEE transaction on MTT , vol.51 , Issue.11 , pp. 2175-2180
    • Pingwi, M.1    and al2
  • 3
    • 33748360592 scopus 로고    scopus 로고
    • An X-band Sage LNA with 1.36 dB mean noise figure for monolithic phased array transmit/erceive radar modules
    • W.-M. L. Kuo and al, "An X-band Sage LNA with 1.36 dB mean noise figure for monolithic phased array transmit/erceive radar modules", in IEEE RFIC Symp. Dig. 2006, pp. 498-501.
    • (2006) IEEE RFIC Symp. Dig , pp. 498-501
    • Kuo, W.-M.L.1    and al2
  • 4
    • 30944433218 scopus 로고    scopus 로고
    • V. J. Patel and al, X-band low noise amplifier using SiGe BiCMOS technology, in IEEE Comp. Semi. Integr. Circuits Symp. Tech. Dig., 2005, pp49-52.
    • V. J. Patel and al, "X-band low noise amplifier using SiGe BiCMOS technology," in IEEE Comp. Semi. Integr. Circuits Symp. Tech. Dig., 2005, pp49-52.
  • 6
    • 33748352627 scopus 로고    scopus 로고
    • Monolithic integrated LNAs in siliconbased bipolar technologies
    • D. Zöschg, and al, "Monolithic integrated LNAs in siliconbased bipolar technologies," in Proc. IEEE/AFCEA EUROCOMM, 2000, pp. 400-403.
    • (2000) Proc. IEEE/AFCEA EUROCOMM , pp. 400-403
    • Zöschg, D.1    and al2
  • 8
    • 26444530995 scopus 로고    scopus 로고
    • Low Noise and High Linearity LNA based on InGaP/GaAs HBT for 5.3 GHz WLAN
    • S.-S. Myoung, and al, "Low Noise and High Linearity LNA based on InGaP/GaAs HBT for 5.3 GHz WLAN," in Microwave and Optical Technology Letters., vol. 46, pp.550-553.
    • Microwave and Optical Technology Letters , vol.46 , pp. 550-553
    • Myoung, S.-S.1    and al2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.