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Volumn 51, Issue 11, 2003, Pages 2175-2180

A novel bipolar-MOSFET low-noise amplifier (BiFET LNA), circuit configuration, design methodology, and chip implementation

Author keywords

Bipolar; Bipolar cascoded with a mosFET (BiFET); Low noise amplifier (LNA); MOSFET

Indexed keywords

COMPUTER ARCHITECTURE; ELECTRIC IMPEDANCE; ELECTRIC POTENTIAL; FREQUENCY RESPONSE; MOSFET DEVICES; PERSONAL COMMUNICATION SYSTEMS; TRANSCONDUCTANCE; WIRELESS TELECOMMUNICATION SYSTEMS;

EID: 0242468147     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMTT.2003.818581     Document Type: Article
Times cited : (29)

References (8)
  • 5
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    • Razavi, B.1
  • 6
    • 0041589196 scopus 로고    scopus 로고
    • A 1.4 mA and 3 mW, SiGe90, BiFET low noise amplifier for wireless portable applications
    • P. Ma, M. Racanelli, J. Zheng, and M. Knight, "A 1.4 mA and 3 mW, SiGe90, BiFET low noise amplifier for wireless portable applications," in RFIC Symp. Dig., June 2003, pp. 237-240.
    • RFIC Symp. Dig., June 2003 , pp. 237-240
    • Ma, P.1    Racanelli, M.2    Zheng, J.3    Knight, M.4
  • 7
    • 0034867311 scopus 로고    scopus 로고
    • A 1.7 mA low noise amplifier with integrated bypass switch for wireless 0.05-6 GHz portable applications
    • H. Morkner, M. Frank, and S. Yajima, "A 1.7 mA low noise amplifier with integrated bypass switch for wireless 0.05-6 GHz portable applications," in IEEE RFIC Symp. Dig., June 2001, pp. 235-238.
    • IEEE RFIC Symp. Dig., June 2001 , pp. 235-238
    • Morkner, H.1    Frank, M.2    Yajima, S.3
  • 8
    • 0036309482 scopus 로고    scopus 로고
    • High performance circuits in 0.18 μm SiGe BiCMOS process for wireless applications
    • P. Ye, B. Agarwal, and M. Reddy et al., "High performance circuits in 0.18 μm SiGe BiCMOS process for wireless applications," in RFIC Symp. Dig., June 2002, pp. 329-332.
    • RFIC Symp. Dig., June 2002 , pp. 329-332
    • Ye, P.1    Agarwal, B.2    Reddy, M.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.