Low-noise and high-linearity LNA based on InGaP/GaAs HBT for 5.3-GHz WLAN

Microwave and Optical Technology Letters

Volumn 46, Issue 6, 2005, Pages 550-553

  Myoung, Seong Sik ^a   Yook, Jong Gwan ^a  

^a Yonsei University   (South Korea)

Author keywords

5.3 gHz; High linearity; InGaP GaAs HBT; LNA; Low noise

Indexed keywords

ELECTRIC INDUCTORS; HIGH ELECTRON MOBILITY TRANSISTORS; LOCAL AREA NETWORKS; SPURIOUS SIGNAL NOISE;

5.3 GHZ WLAN; FIGURE OF MERIT (FOM); HIGH LINEARITY; INGAP/GAAS HBT; LNA;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 26444530995     PISSN: 08952477     EISSN: None     Source Type: Journal    
DOI: 10.1002/mop.21047     Document Type: Article

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