Broadband noise modeling of SiGe HBT under cryogenic temperatures

Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium

Volumn , Issue , 2007, Pages 765-768

  Banerjee, Bhaskar ^a   Venkataraman, Sunitha ^a   Lee, Chang Ho ^b   Laskar, Joy ^a  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b Samsung Design Center   (United States)

Author keywords

Bipolar technology; Cryogenics; Noise; Noise figure; Noise model; Noisy two port; Shot noise; SiGe HBT

Indexed keywords

BIAS CURRENTS; CRYOGENICS; NOISE FIGURE; PARAMETER ESTIMATION; SHOT NOISE; SILICON COMPOUNDS;

BIPOLAR TECHNOLOGY; NOISE MODELS; NOISE PARAMETERS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 34748843932     PISSN: 15292517     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RFIC.2007.380995     Document Type: Conference Paper

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