Complex current gain and cutoff frequency determination of HBTs

Electronics Letters

Volumn 36, Issue 14, 2000, Pages 1236-1237

  Zerounian, N ^a   Aniel, F ^a   Adde, R ^a  

^a UNIVERSITÉ PARIS SACLAY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FREQUENCY MEASUREMENT; GAIN MEASUREMENT; POLES AND ZEROS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE;

INDIUM ALUMINUM ARSENIDE;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0033705936     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20000875     Document Type: Article

References (7)

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2. T', Proc. IEEE, 1969, 57, pp. 2159 (and references therein)
3. T of bipolar transistors', Solid-State Electron., 1983, 26, (1), pp. 75-82
4. l-xAs graded base InP double heterojunction bipolar transistor', IEEE MTT-S Dig., 1994, pp. 1167-1170
5. ANIEL, F., ZEROUNIAN, N., GRUHLE, A., MÄHNER, C., CROZAT, P., and ADDE, R.: 'Analysis of SiGe HBT characteristic times'. Proc. ESSDERC, Bordeaux, France, 1998, pp. 264-267
6. GIGUERRE, L., ANIEL, F., ABBOUN, M., ADDE, R., RIET, M., BLAYAC, S., and BENCHIMOL, J.L.: 'Cryogenic behaviour of InP double heterojunction bipolar transistor'. Proc. WOLTE 4, Noordwijk, The Netherlands, June 2000
7. max for HBT's', IEEE Trans. Electron Devices, 1996, 43, pp. 2074-2079