A 26 to 40GHz wideband SiGe balanced power amplifier IC

Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium

Volumn , Issue , 2007, Pages 729-732

  Chang, Michael ^a   Rebeiz, Gabriel M ^b  

^a UNIVERSITY OF MICHIGAN   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Ka band; Linear power amplifier; Millimeter wave (mmW) integrated circuits; Power amplifier (PA); Silicon germanium (siGe) HBT; Wideband amplifier

Indexed keywords

BANDWIDTH; BROADBAND AMPLIFIERS; GAIN MEASUREMENT; HETEROJUNCTION BIPOLAR TRANSISTORS; INTEGRATED CIRCUIT LAYOUT; MILLIMETER WAVE DEVICES; SILICON COMPOUNDS;

KA-BAND; LINEAR POWER AMPLIFIERS; MILLIMETER WAVE INTEGRATED CIRCUITS; SILICON GERMANIUM;

POWER AMPLIFIERS;

EID: 34748836330     PISSN: 15292517     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RFIC.2007.380986     Document Type: Conference Paper

References (9)

1. B.A. Floyd, et al., "SiGe Bipolar Transceiver Circuits Operating at 60 GHz," IEEE JSSC, pp. 156-167, Jan. 2005.
2. B.C. Kane, et al., "Smart Phased Array SoCs: A Novel Application for Advanced SiGe HBT BiCMOS Technology," IEEE Proceedings, pp. 1656-1668, Sep. 2005.
3. T.S.D. Cheung, J.R. Long, "A 21-26-GHz SiGe Bipolar Power Amplifier MMIC," IEEE JSSC, pp. 2583-2597, Dec. 2005.
4. A. Komijani, A. Hajimiri, "A Wideband 77-GHz, 17.5-dBm Fully Integrated Power Amplifier in Silicon," IEEE JSSC, pp. 1749-1756, Aug. 2006.
5. M. Rickelt, H.-M. Rein, E. Rose, "Influence of ImpactIonization- Induced Instabilities on the Maximum Usable Output Voltage of Si-Bipolar Transistors," IEEE Trans. Electron Devices, pp. 774-783, April 2001.
6. S. Chartier, E. Sonmez, H. Schumacher, "24 and 36 GHz SiGe HBT power Amplifiers," Silicon Monolithic Integrated Circuits in RF Systems, Digest, pp. 251-254, Sep. 2004.
7. J.P. Comeau, IM. Andrews, J.D. Cressler, "A Monolithic 24 GHz, 20 dBm, 14% PAE SiGe HBT Power Amplifier," European Microwave Conference Proceedings, pp. 419- 422, Sep. 2006.
8. A. Komijani, A. Natarajan, A. Hajimiri, "A 24-GHz, +14.5-dBm Fully Integrated Power Amplifier in 0.18-um CMOS," IEEE JSSCpp. 1901-1908, Sep. 2005.
9. N. Kinayman, A. Jenkins, D. Helms, I. Gresham, "Design of 24 GHz SiGe HBT Balanced Power Amplifier for System-on-a-Chip Ultra-Wideband Applications," IEEE RFIC Symposium Digest, pp. 91-94, June 2005.