24 and 36 GHz SiGe HBT power ampli ers

2004 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems: Digest of Papers

Volumn , Issue , 2004, Pages 251-254

  Chartier, Sebastien ^a   Sonmez, Ertugrul ^a   Schumacher, Hermann ^a  

^a UNIVERSITY OF ULM   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANTENNAS; BANDWIDTH; CURRENT DENSITY; FREQUENCIES; HETEROJUNCTION BIPOLAR TRANSISTORS; MATHEMATICAL MODELS; SILICON COMPOUNDS; TOPOLOGY;

EFFECTIVE AREA; ISM BANDS; MMIC AMPLIFIERS; RF PERFORMANCE;

POWER AMPLIFIERS;

EID: 20344394229     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)

1. S. Shinjo, H. Ueda, T. Sugano, M. Nakanishi, M. Inoue, and N. Suematsu, High PIdB and low Quiescent Current SiGe HBT Power Ampli er MMIC Using Self Base Bias Control Circuit for 5.8 GHz ETC Terminals, IEEE/MMT-S International Symposium Digest Philadelphia, Pennsylvania 2003.
2. A. Schuppen, J. Berntgen, P. Maier, M. Tortschanoff, W. Kraus, and M. Averweg An 80 GHz SiGe Production Technology, III-Vs Review, Vol. 14, pp 42-46, August 2001.
3. E. Sonmez, W. Durr, P. Abele, K. -B. Schad, H. Schumacher, Parameter Extraction of SiGe HBTs for a scalable MEXTRAM Model and Performance Veri cation by a SiGe HBT MMIC Active Receive Design for IIGHz, IEEE/MMT-S International Symposium Digest Philadelphia, Pennsylvania 2003.