Dopant redistribution and loss during ternary silicide CoxNi1-xSi2 formation

ASMC (Advanced Semiconductor Manufacturing Conference) Proceedings

Volumn 2003-January, Issue , 2003, Pages 171-174

  Xu, Y Q ^a   Zhao, J ^a   Lu, J P ^a   Miles, D ^a   Loewecke, J ^a   Tiner, P ^a   Dong, Xia ^b   Novak, Steve W ^b  

^a TEXAS INSTRUMENTS   (United States)

^b Evans East Inc   (United States)

Author keywords

Annealing; Boron; Cobalt; Mass spectroscopy; Silicides; Silicon; Temperature; Thermal resistance; USA Councils; X ray scattering

Indexed keywords

ANNEALING; BORON; BUDGET CONTROL; COBALT; COBALT COMPOUNDS; HEAT RESISTANCE; NICKEL COMPOUNDS; PHASE STRUCTURE; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DEVICE MANUFACTURE; SILICIDES; SILICON; TEMPERATURE; X RAY SCATTERING;

ANNEAL TEMPERATURES; DOPANT REDISTRIBUTION; LOW THERMAL BUDGET; MASS SPECTROSCOPY; POLYSILICON GATES; SOURCE/DRAIN JUNCTIONS; TERNARY SILICIDES; USA COUNCILS;

NITROGEN COMPOUNDS;

EID: 84941770033     PISSN: 10788743     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ASMC.2003.1194489     Document Type: Conference Paper

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