A comprehensive model for hot carrier degradation in LDMOS transistors

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2007, Pages 492-497

  Moens, P ^a   Mertens, J ^b   Bauwens, F ^a   Joris, P ^a   De Ceuninck, W ^b   Tack, M ^a  

^a ON SEMICONDUCTOR   (United States)

^b HASSELT UNIVERSITY   (Belgium)

Author keywords

AC degradation; Hot carrier; Hot holes; Interface states; LDMOS; Model

Indexed keywords

CMOS INTEGRATED CIRCUITS; DEGRADATION; HOT CARRIERS; MATHEMATICAL MODELS; MOS DEVICES;

AC DEGRADATION; HOT HOLES; INTERFACE STATES;

TRANSISTORS;

EID: 34548805918     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2007.369940     Document Type: Conference Paper

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