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Volumn , Issue , 2007, Pages 486-491

Investigation and improvement of fast temperature-cycle reliability for DMOS-related conductor path design

Author keywords

Aluminum metallization; Extrusion; Interlayer dielectric cracking; Power cycling; Short circuit

Indexed keywords

ALUMINUM; DEFORMATION; METALLIZING; RELIABILITY THEORY; SHORT CIRCUIT CURRENTS; STRESS ANALYSIS; TRANSISTORS; VISCOPLASTICITY;

EID: 34548789070     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2007.369939     Document Type: Conference Paper
Times cited : (22)

References (12)
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  • 5
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  • 8
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    • M. Ciappa et al., "Plastic-Strain Of Aluminum Interconnections During Pulsed Operation Of IGBT Multichip Modules" Quality and Reliability Engineering International, 1996, pp. 297-303.
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  • 9
    • 4544357253 scopus 로고    scopus 로고
    • Analysis of wire bond and metallization degradation mechanisms in DMOS power transitors stressed under thermal overload conditions
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  • 10
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.