Plastic-strain of aluminium interconnections during pulsed operation of IGBT multichip modules

Quality and Reliability Engineering International

Volumn 12, Issue 4, 1996, Pages 297-303

  Ciappa, Mauro ^a,b,c   Malberti, Paolo ^a,d,e,f  

^a ETH ZURICH   (Switzerland)

^b UNIVERSITY OF ZURICH   (Switzerland)

^c SWISS FEDERAL INSTITUTE OF TECHNOLOGY   (Switzerland)

^d UNIVERSITY OF MILAN   (Italy)

^e Telettra   (Italy)

^f Tetebras R and D Center   (Brazil)

Author keywords

Aluminium reconstruction; Failure mechanism; IGBT; Power devices; Reliability

Indexed keywords

ALUMINUM; BIPOLAR TRANSISTORS; FAILURE ANALYSIS; MATHEMATICAL MODELS; MULTICHIP MODULES; PLASTIC DEFORMATION; POWER ELECTRONICS; RELIABILITY;

ALUMINUM INTERCONNECTION; ALUMINUM RECONSTRUCTION; BOND WIRES; CHIP METALLIZATION; INSULATED GATE BIPOLAR TRANSISTOR; POWER CYCLE TEST;

ELECTRIC WIRING;

EID: 0030198137     PISSN: 07488017     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1099-1638(199607)12:4<297::AID-QRE21>3.0.CO;2-C     Document Type: Article

References (5)

1. B. Jayant Baliga, 'Evolution of MOS-bipolar power semiconductor technology', Proc. IEEE, 76, 409-418 (1988).
2. A. Gangulee, 'Strain relaxation in thin films on substrates', Acta Metall. 22, 177-183 (1974).
3. P. L. Castro and J. F. Campbell, Proc., Montreal Symposium on Ohmic Contacts, The Electrochemical Society, 1969.
4. K. Ohga, 'Failure analysis of bonding wires in power transistor modules', ISTFA 1991, pp. 237-247.
5. A. Urbieta and F. Secanella, 'Characterization of aluminum reconstruction failure mode', ISTFA, 1990, pp. 179-182.