Reliability characterization of BEOL vertical natural capacitor using copper and low-k SiCOH dielectric for 65nm RF and mixed-signal applications

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2006, Pages 490-495

  Chen, F ^a   Ungar, F ^b   Fischer, A H ^b   Gill, J ^a   Chinthakindi, A ^a   Goebel, T ^b   Shinosky, M ^a   Coolbaugh, D ^a   Ramachandran, V ^a   Siew, Y K ^c   Kaltalioglu, E ^b   Kim, S O ^b   Park, K ^d  

^a IBM MICROELECTRONICS   (United States)

^b INFINEON TECHNOLOGIES AG   (Germany)

^c CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

^d SAMSUNG Electronics   (South Korea)

Author keywords

Capacitance stability; Cu interconnect; ILD; Low k; Moisture impact; Process integration; Reliability; Time dependent dielectric breakdown

Indexed keywords

CAPACITANCE STABILITY; MOISTURE IMPACT; PROCESS INTEGRATION; TIME DEPENDENT DIELECTRIC BREAKDOWN;

CMOS INTEGRATED CIRCUITS; COPPER; DIELECTRIC MATERIALS; ELECTRIC BREAKDOWN; MOISTURE; RELIABILITY; SILICON COMPOUNDS;

CAPACITORS;

EID: 34250722144     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2006.251267     Document Type: Conference Paper

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