-
3
-
-
0142048135
-
-
N. F. Podgrushko, N. F. Selivanova, and L. A. Dvorina, Izv. Akad. Nauk SSSR, Neorg. Mater. 10, 150 (1974).
-
(1974)
Izv. Akad. Nauk SSSR, Neorg. Mater.
, vol.10
, pp. 150
-
-
Podgrushko, N.F.1
Selivanova, N.F.2
Dvorina, L.A.3
-
5
-
-
0016939334
-
-
K. Nakamura, J. O. Olowolafe, S. S. Lau, M. A. Nicolet, J. W. Mayer, and R. Shima, J. Appl. Phys. 47, 1278 (1976).
-
(1976)
J. Appl. Phys.
, vol.47
, pp. 1278
-
-
Nakamura, K.1
Olowolafe, J.O.2
Lau, S.S.3
Nicolet, M.A.4
Mayer, J.W.5
Shima, R.6
-
6
-
-
0001015120
-
-
R. Pretorius, C. L. Ramiller, S. S. Lau, and M. A. Nicolet, Appl. Phys. Lett. 30, 501 (1977).
-
(1977)
Appl. Phys. Lett.
, vol.30
, pp. 501
-
-
Pretorius, R.1
Ramiller, C.L.2
Lau, S.S.3
Nicolet, M.A.4
-
9
-
-
0007039302
-
-
R. Anderson, J. Baglin, J. Dempsey, W. Hammer, F. d'Heurle, and S. Petersson, Appl. Phys. Lett. 35, 285 (1979).
-
(1979)
Appl. Phys. Lett.
, vol.35
, pp. 285
-
-
Anderson, R.1
Baglin, J.2
Dempsey, J.3
Hammer, W.4
D'Heurle, F.5
Petersson, S.6
-
10
-
-
0019586303
-
-
J. E. E. Baglin, H. A. Atwater, D. Gupta, and F. M. d'Heurle, Thin Solid Films 93, 255 (1981).
-
(1981)
Thin Solid Films
, vol.93
, pp. 255
-
-
Baglin, J.E.E.1
Atwater, H.A.2
Gupta, D.3
D'Heurle, F.M.4
-
13
-
-
0018999309
-
-
N. W. Cheung, P. J. Grunthaner, F. J. Grunthaner, J. W. Mayer, and B. M. Ullrich, J. Vac. Sci. Technol. 18, 917 (1980).
-
(1980)
J. Vac. Sci. Technol.
, vol.18
, pp. 917
-
-
Cheung, N.W.1
Grunthaner, P.J.2
Grunthaner, F.J.3
Mayer, J.W.4
Ullrich, B.M.5
-
14
-
-
0021444627
-
-
F. d'Heurle, C. S. Petersson, J. E. E. Baglin, S. J. La Placa, and C. Y. Wong, J. Appl. Phys. 55, 4208 (1984).
-
(1984)
J. Appl. Phys.
, vol.55
, pp. 4208
-
-
D'Heurle, F.1
Petersson, C.S.2
Baglin, J.E.E.3
La Placa, S.J.4
Wong, C.Y.5
-
15
-
-
0042788077
-
-
C. Lavoie, R. Purtell, C. Cöia, C. Detavernier, P. Desjardins, J. Jordan-Sweet, C. Cabral, F. M. d'Heurle, and J. M. E. Harper, Proc.-Electrochem. Soc. 11, 455 (2002).
-
(2002)
Proc.-Electrochem. Soc.
, vol.11
, pp. 455
-
-
Lavoie, C.1
Purtell, R.2
Cöia, C.3
Detavernier, C.4
Desjardins, P.5
Jordan-Sweet, J.6
Cabral, C.7
D'Heurle, F.M.8
Harper, J.M.E.9
-
18
-
-
28544443245
-
-
edited by L. J.Chen, C.Lavoie, C.Detavernier, and P.Besser (IEE, London
-
C. Lavoie, C. Detavernier, and P. Besser, in Nickel Silicide Technology, edited by, L. J. Chen, C. Lavoie, C. Detavernier, and, P. Besser, (IEE, London, 2004), Vol. 5, pp. 95-151.
-
(2004)
Nickel Silicide Technology
, vol.5
, pp. 95-151
-
-
Lavoie, C.1
Detavernier, C.2
Besser, P.3
-
19
-
-
0029310051
-
-
T. Morimoto, T. Ohguro, H. S. Momose, T. Iinuma, I. Kunishima, K. Suguro, I. Katakabe, H. Nakajima, M. Tshuchiaki, M. Ono, Y. Katsumata, and H. Iwai, IEEE Trans. Electron Devices 42, 915 (1995).
-
(1995)
IEEE Trans. Electron Devices
, vol.42
, pp. 915
-
-
Morimoto, T.1
Ohguro, T.2
Momose, H.S.3
Iinuma, T.4
Kunishima, I.5
Suguro, K.6
Katakabe, I.7
Nakajima, H.8
Tshuchiaki, M.9
Ono, M.10
Katsumata, Y.11
Iwai, H.12
-
20
-
-
33751307441
-
-
C. Lavoie, C. Detavernier, C. Cabral, Jr., F. M. d'Heurle, A. J. Kellock, J. Jordan-Sweet, and J. M. E. Harper, Microelectron. Eng. 83, 2042 (2006).
-
(2006)
Microelectron. Eng.
, vol.83
, pp. 2042
-
-
Lavoie, C.1
Detavernier, C.2
Cabral Jr., C.3
D'Heurle, F.M.4
Kellock, A.J.5
Jordan-Sweet, J.6
Harper, J.M.E.7
-
22
-
-
33845659565
-
-
K. Thompson, D. Lawrence, D. J. Larson, J. D. Olson, T. F. Kelly, and B. Gorman, Ultramicroscopy 107, 131 (2007).
-
(2007)
Ultramicroscopy
, vol.107
, pp. 131
-
-
Thompson, K.1
Lawrence, D.2
Larson, D.J.3
Olson, J.D.4
Kelly, T.F.5
Gorman, B.6
-
23
-
-
33750161065
-
-
D. E. Perea, J. L. Lensch, S. J. May, B. W. Wessels, and L. J. Lauhon, Appl. Phys. A: Mater. Sci. Process. 85, 271 (2006).
-
(2006)
Appl. Phys. A: Mater. Sci. Process.
, vol.85
, pp. 271
-
-
Perea, D.E.1
Lensch, J.L.2
May, S.J.3
Wessels, B.W.4
Lauhon, L.J.5
-
25
-
-
0000675833
-
-
O. C. Hellman, J. A. Vandenbroucke, J. Rüsing, D. Isheim, and D. N. Seidman, Microsc. Microanal. 6, 437 (2000).
-
(2000)
Microsc. Microanal.
, vol.6
, pp. 437
-
-
Hellman, O.C.1
Vandenbroucke, J.A.2
Rüsing, J.3
Isheim, D.4
Seidman, D.N.5
-
26
-
-
0037090029
-
-
A detailed description of the calculation of Gibbsian interfacial excess using atom-probe tomography data appears in O. C. Hellman and D. N. Seidman, Mater. Sci. Eng., A 327, 24 (2002).
-
(2002)
Mater. Sci. Eng., A
, vol.327
, pp. 24
-
-
Hellman, O.C.1
Seidman, D.N.2
-
28
-
-
0041511690
-
-
Th. Gatzel, S. Sadewasser, R. Shikler, Y. Rosenwaks, and M. Ch. Lux-Steiner, Mater. Sci. Eng., B 102, 138 (2003).
-
(2003)
Mater. Sci. Eng., B
, vol.102
, pp. 138
-
-
Gatzel, Th.1
Sadewasser, S.2
Shikler, R.3
Rosenwaks, Y.4
Ch., L.M.5
-
29
-
-
33746216138
-
-
S. R. Naik, S. Rai, G. S. Lodha, and R. Brajpuriya, J. Appl. Phys. 100, 013514 (2006).
-
(2006)
J. Appl. Phys.
, vol.100
, pp. 013514
-
-
Naik, S.R.1
Rai, S.2
Lodha, G.S.3
Brajpuriya, R.4
|