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Volumn 91, Issue 11, 2007, Pages

Three-dimensional atomic-scale mapping of Pd in Ni1-x Pdx SiSi (100) thin films

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; MOS DEVICES; PALLADIUM; STABILIZATION; SUBSTRATES; SURFACE ROUGHNESS; TOMOGRAPHY;

EID: 34548682801     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2784196     Document Type: Article
Times cited : (20)

References (29)
  • 18
    • 28544443245 scopus 로고    scopus 로고
    • edited by L. J.Chen, C.Lavoie, C.Detavernier, and P.Besser (IEE, London
    • C. Lavoie, C. Detavernier, and P. Besser, in Nickel Silicide Technology, edited by, L. J. Chen, C. Lavoie, C. Detavernier, and, P. Besser, (IEE, London, 2004), Vol. 5, pp. 95-151.
    • (2004) Nickel Silicide Technology , vol.5 , pp. 95-151
    • Lavoie, C.1    Detavernier, C.2    Besser, P.3
  • 26
    • 0037090029 scopus 로고    scopus 로고
    • A detailed description of the calculation of Gibbsian interfacial excess using atom-probe tomography data appears in O. C. Hellman and D. N. Seidman, Mater. Sci. Eng., A 327, 24 (2002).
    • (2002) Mater. Sci. Eng., A , vol.327 , pp. 24
    • Hellman, O.C.1    Seidman, D.N.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.