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Volumn 102, Issue 5, 2007, Pages

Oxidation of silicon: Further tests for the interfacial silicon emission model

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; MATHEMATICAL MODELS; OXIDATION; OXYGEN; REACTION RATES;

EID: 34548645162     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2773693     Document Type: Article
Times cited : (11)

References (27)
  • 1
    • 1642621158 scopus 로고
    • 0021-8979 10.1063/1.1713945
    • B. E. Deal and A. S. Grove, J. Appl. Phys. 0021-8979 10.1063/1.1713945 36, 3770 (1965).
    • (1965) J. Appl. Phys. , vol.36 , pp. 3770
    • Deal B., E.1    Grove A., S.2
  • 5
    • 0000835276 scopus 로고    scopus 로고
    • 0031-9007 10.1103/PhysRevLett.81.5936
    • H. Kageshima and K. Shiraishi, Phys. Rev. Lett. 0031-9007 10.1103/PhysRevLett.81.5936 81, 5936 (1998).
    • (1998) Phys. Rev. Lett. , vol.81 , pp. 5936
    • Kageshima, H.1    Shiraishi, K.2
  • 15
    • 0017517271 scopus 로고
    • 0021-8979 10.1063/1.324099
    • Y. Kamigaki and Y. Itoh, J. Appl. Phys. 0021-8979 10.1063/1.324099 48, 2891 (1977).
    • (1977) J. Appl. Phys. , vol.48 , pp. 2891
    • Kamigaki, Y.1    Itoh, Y.2
  • 20
    • 0038686766 scopus 로고
    • 1364-2812 10.1080/13642818708218374
    • J. Blanc, Philos. Mag. B 1364-2812 10.1080/13642818708218374 55, 685 (1987).
    • (1987) Philos. Mag. B , vol.55 , pp. 685
    • Blanc, J.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.