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Volumn 18, Issue 16, 2006, Pages 1717-1719

All-epitaxial InAlGaAs-InP VCSELs in the 1.3-1.6-μm wavelength Range for CWDM band applications

Author keywords

Epitaxial; InAlGaAs; InP; Metal organic chemical vapor deposition (MOCVD); Monolithic; Vertical cavity surface emitting laser (VCSEL)

Indexed keywords

CW OPERATION; DIVERGENCE ANGLE; INALGAAS; INP; METALORGANIC CHEMICAL VAPOR DEPOSITION; MODULATION BANDWIDTH; OUTPUT POWER; POWER PENALTY; SIDE MODE SUPPRESSION RATIOS; SINGLE MODE; VERTICAL-CAVITY SURFACE EMITTING LASER; WAVELENGTH RANGES;

EID: 41749105999     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2006.879940     Document Type: Article
Times cited : (57)

References (11)
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.