Single-mode 1.27-μm InGaAs:Sb-GaAs-GaAsP quantum well vertical cavity surface emitting lasers

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 11, Issue 1, 2005, Pages 121-125

  Kuo, Hao Chung ^a   Chang, Ya Hsien ^a   Chang, Yi An ^a   Lai, Fang I ^a   Chu, Jung Tang ^a   Tsai, Min Ying ^a   Wang, Shing Chung ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Characterization; InGaAsSb; Laser diodes; Metalorganic chemical vapor deposition (MOCVD); Optical fiber devices; Semiconducting

Indexed keywords

BANDWIDTH; DATA PROCESSING; ELECTRIC CURRENTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MODULATION; OPTICAL DEVICES; OPTICAL FIBERS; OPTICAL PROPERTIES; PHYSIOLOGICAL MODELS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY;

GROWTH RATES; OPTICAL FIBER DEVICES; ROOM TEMPERATRURE; THRESHOLD CURRENTS;

SEMICONDUCTOR LASERS;

EID: 14544307004     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSTQE.2004.841696     Document Type: Article

References (20)

1. M. Tan, "Progress in long wavelength VCSELs," in Proc. Lasers Electro-Optics Soc., 15th Annu. Meet. IEEE, vol. 1, 2002, pp. 269-270.
2. M. Kondow, T. Kitatani, S. Nakatsuka, M. C. Larson, K. Nakahara, Y. Yazawa, M. Okai, and K. Uomi, "GaInNAs: A novel material for long-wavelength semiconductor lasers," IEEE J. Select. Topic Quantum Electron., vol. 3, no. 3, pp. 719-730, Jun. 1997.
3. C. W. Tu and P. Yu, "Material properties of III-V semiconductors for lasers and detectors," MRS Bull., vol. 28, pp. 345-349, 2003.
4. C. W. Tu, "I1I-N-V low bandgap nitrides and their device applications," J. Phys:Condens. Matter, vol. 13, pp. 7169-7182, 2001.
5. K. D. Choquette, J. F. Klem, A. J. Fischer, O. Blum, A. A. Allerman, I. J. Fritz, S. R. Kurtz, W. G. Breiland, R. Sieg, K. M. Geib, J. W. Scott, and R. L. Naone, "Room temperature continuous wave InGaAsN quantum well vertical-cavity lasers emitting at 1.3 μm," Electron. Lett., vol. 36, no. 16, pp. 1388-1390, 2000.
6. T. Takeuchi, Y.-L. Chang, M. Leary, A. Tandon, H.-C. Luan, D. Bour, S. Corzine, R. Twist, and M. Tan, "1.3-μm InGaAsN vertical cavity surface emitting lasers grown by MOCVD," Electron. Lett., vol. 38, pp. 1438-1440, 2002.
7. M. Kawaguchi, T. Miyamoto, E. Gouardes, D. Schlenker, T. Kondo, F. Koyama, and K. Iga, "Lasing characteristics of low-threshold GaInNA's lasers grown by metalorganic chemical vapor deposition," Jpn. J. Appl. Phys., vol. 40, pp. L744-L746, 2001.
8. N. Tansu and L. J. Mawst, "Temperature sensitivity of 1300-nm InGaAsN quantum-well lasers," IEEE Photon. Technol. Lett., vol. 14, pp. 1052-1054, 2002.
9. F. Koyama, D. Schlenker, T. Miyamoto, Z. Chen, A. Matsutani, T. Sakaguchi, and K. Iga, "1.2 μm highly strained GaInAs/GaAs quantum well lasers for single mode fiber datalink," Electron. Lett., vol. 35, no. 13, pp. 1079-1081, 1999.
10. N. Tansu, J. Y. Yeh, and L. J. Mawst, "Extremely-low threshold-current-density InGaAs quantum well lasers with emission wavelength of 1215-1233 nm," Appl. Phys. Lett., vol. 82, no. 23, pp. 4038-4040, 2003.
11. P. Sundgren, R. M. von Wurtemberg, J. Berggren, M. Hammar, M. Ghisoni, V. Oscarsson, E. Odling, and J. Malmquist, "High-performance 1.3-μm InGaAs vertical cavity surface emitting lasers," Electron. Lett., vol. 39, pp. 1128-1129, 2003.
12. V. Gambin, H. Wonill, M. Wistey, Y. Homan, S. R. Bank, S. M. Kim, and J. S. Harris, "GaInNAsSb for 1.3-1.6 μm-long wavelength lasers grown by molecular beam epitaxy," IEEE J. Select. Topic Quantum Electron., vol. 8, no. 4, pp. 795-800, Jul./Aug. 2002.
13. J. C. Harmand, L. H. Li, G. Patriarche, and L. Travers, "GaInAs/GaAs quantum-well growth assisted by Sb surfactant: toward 1.3 μm emission," Appl. Phys. Lett., vol. 84, pp. 3981-3983, 2004.
14. 1-x As on GaAs (00I)," Appl. Phys. Lett., vol. 61, pp. 99-101, 1992.
15. J. W. Matthews and A. E. Blakeslee, J. Crystal Growth, vol. 27, p. 118, 1974.
16. N. Tansu, J. Y. Yeh, and L. J. Mawst, "Extremely low threshold-current-density InGaAs quantum-well lasers with emission wavelength of 1215-1233 nm," Appl. Phys. Lett., vol. 82, pp. 4038-4040, 2003.
17. N. Tansu, Y. L. Chang, T. Takeuchi, D. P. Bour, S. W. Corzine, M. R. T. Tan, and L. J. Mawst, "Temperature analysis and characteristics of highly strained InGaAs-GaAsP-GaAs (λ > 1.17 μm) quantum-well lasers," IEEE J. Quantum Electron., vol. 38, no. 6, pp. 640-651, Jun. 2002.
18. 1-x/Si strained-layer heterostructures," Appl. Phys. Lett., vol. 47, pp. 322-325, 1985.
19. H. C. Kuo, Y. S. Chang, F. Y. Lai, T. H. Hsueh, L. H. Laih, and S. C. Wang, "High-speed modulation of 850 nm InGaAsP/InGaP strain-compensated VCSELs," Electron. Lett., vol. 39, pp. 1051-1053, 2003.
20. H. J. Unold, S. W. Z. Mahmoud, R. Jäger, M. Grabherr, R. Michalzik, and K. J. Ebeling, "Large-area single-mode VCSELs and the self-aligned surface relief," IEEE J. Select. Topics Quantum Electron., vol. 7, no. 2, pp. 386-392, Mar./Apr. 2000.