Temperature sensitivity of the threshold current of long-wavelength InGaAs-GaAs VCSELs with large gain-cavity detuning

IEEE Journal of Quantum Electronics

Volumn 40, Issue 5, 2004, Pages 453-462

  Mogg, Sebastian ^a   Chitica, Nicolae ^b   Christiansson, Ulf ^b   Schatz, Richard ^a   Sundgren, Petrus ^a   Asplund, Carl ^a   Hammar, Mattias ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b Mitel Semiconductor AB   (Sweden)

Author keywords

Gain offset; InGaAs GaAs; Long wavelength; Temperature sensitivity; Vertical cavity surface emitting laser (VCSEL)

Indexed keywords

ELECTRIC CURRENTS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS; TEMPERATURE;

GAIN CAVITY DETUNING; THRESHOLD CURRENT;

SEMICONDUCTOR LASERS;

EID: 2442459997     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2004.826421     Document Type: Article

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