High speed, high temperature operation of 1.28μm singlemode InGaAs VCSELs

Electronics Letters

Volumn 42, Issue 17, 2006, Pages 978-979

  Soderberg E ^a   Modh, P ^a   Gustavsson, J S ^a   Larsson, A ^a   Zhang, Z Z ^b   Berggren, J ^b   Hammar, M ^b  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

^b ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

FABRICATION; PHASE MODULATION; SURFACE PROPERTIES; THERMODYNAMIC PROPERTIES;

FABRICATION TOLERANCES; GBIT/S MODULATION; HIGHER-ORDER MODE SUPPRESSION; SURFACE RELIEF TECHNIQUE;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 33747782140     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20062102     Document Type: Article

References (7)

1. Sundgren, P.: et al. ' High performance 1.3m InGaAs vertical cavity surface emitting lasers ', Electron. Lett., 2003, 39, p. 1128 10.1049/el:20030733 0013-5194
2. Mogg, S.: et al. ' Temperature sensitivity of the threshold current of long-wavelength InGaAs-GaAs VCSELs with large gain-cavity detuning ', IEEE J. Quantum. Electron., 2004, 40, p. 453 10.1109/JQE.2004.826421 0018-9197
3. Martinsson, H.: et al. ' Transverse mode selection in large area oxide confined VCSELs using a shallow surface structure ', IEEE Photonics Technol. Lett., 1999, 11, p. 1536 10.1109/68.806837 1041-1135
4. Unold, H.J.: et al. ' Large-area single-mode VCSELs and the self-aligned surface relief ', IEEE J. Sel. Top. Quantum Electron., 2000, 7, p. 386 10.1109/2944.954155 1077-260X
5. Kuo, H.C.: et al. ' Single mode 1.27m InGaAs:Sb-GaAs-GaAsP quantum well vertical cavity surface emitting lasers ', IEEE J. Sel. Top. Quantum Electron., 2005, 11, p. 121 1077-260X
6. Haglund, Å.: et al. ' Single fundamental mode output power exceeding 6mW from VCSELs with a shallow surface relief ', IEEE Photonics Technol. Lett., 2004, 16, p. 368 10.1109/LPT.2003.821085 1041-1135
7. Chang, S.J.: et al. ' Highly strained InGaAs oxide confined VCSELs emitting in 1.25m ', Mater. Sci. Eng. B, 2005, 121, p. 60 10.1016/j.mseb.2005. 03.011