Estimation of electron traps in carbon-60 field-effect transistors by a thermally stimulated current technique

Applied Physics Letters

Volumn 91, Issue 10, 2007, Pages

  Matsushima, Toshinori ^a   Yahiro, Masayuki ^a   Adachi, Chihaya ^b  

^a JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^b KYUSHU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRON MOBILITY; ELECTRON TRAPS; FULLERENES; THIN FILMS;

CURRENT ON/OFF RATIO; ELECTRON TRAP CONCENTRATION; THERMALLY STIMULATED CURRENT (TSC) TECHNIQUE;

FIELD EFFECT TRANSISTORS;

EID: 34548508168     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2779240     Document Type: Article

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