-
2
-
-
0033554712
-
Lanthanum-substituted bismuth titanate for use in non-volatile memories
-
Park B.H., Kang B.S., Bu S.D., Noh T.W., Lee J., and Jo W. Lanthanum-substituted bismuth titanate for use in non-volatile memories. Nature 401 (1999) 682-684
-
(1999)
Nature
, vol.401
, pp. 682-684
-
-
Park, B.H.1
Kang, B.S.2
Bu, S.D.3
Noh, T.W.4
Lee, J.5
Jo, W.6
-
3
-
-
0032621372
-
12
-
12. Appl. Phys. Lett. 74 (1999) 1907-1909
-
(1999)
Appl. Phys. Lett.
, vol.74
, pp. 1907-1909
-
-
Park, B.H.1
Hyun, S.J.2
Bu, S.D.3
Noh, T.W.4
Lee, J.5
Kim, H.-D.6
Kim, T.H.7
Jo, W.8
-
4
-
-
0001450817
-
9 layerd perovskites via in situ, real-time ion-beam analysis
-
9 layerd perovskites via in situ, real-time ion-beam analysis. Appl. Phys. Lett. 69 (1996) 2671-2673
-
(1996)
Appl. Phys. Lett.
, vol.69
, pp. 2671-2673
-
-
Auciello, O.1
Krauss, A.R.2
Im, J.3
Gruen, D.M.4
Irene, E.A.5
Chang, R.P.H.6
McGuire, G.E.7
-
7
-
-
0037100961
-
Ion beam etching of lead-zirconate-titanate thin films: correlation between etching parameters and electrical properties evolution
-
Soyer C., Cattan E., Remiens D., and Guilloux-Viry M. Ion beam etching of lead-zirconate-titanate thin films: correlation between etching parameters and electrical properties evolution. J. Appl. Phys. 92 (2002) 1048-1055
-
(2002)
J. Appl. Phys.
, vol.92
, pp. 1048-1055
-
-
Soyer, C.1
Cattan, E.2
Remiens, D.3
Guilloux-Viry, M.4
-
8
-
-
4644335994
-
Stacking effect on the ferroelectric properties of PZT/PLZT multilayer thin films formed by photochemical metal-organic deposition
-
Park H.-H., Park H.-H., and Hill R.H. Stacking effect on the ferroelectric properties of PZT/PLZT multilayer thin films formed by photochemical metal-organic deposition. Appl. Surf. Sci. 237 (2004) 427-432
-
(2004)
Appl. Surf. Sci.
, vol.237
, pp. 427-432
-
-
Park, H.-H.1
Park, H.-H.2
Hill, R.H.3
-
9
-
-
0000031306
-
Dielectric anomaly in strontium bismuth tantalate thin films
-
Takemura K., Noguchi T., Hase T., and Miyasaka Y. Dielectric anomaly in strontium bismuth tantalate thin films. Appl. Phys. Lett. 73 (1998) 1649-1651
-
(1998)
Appl. Phys. Lett.
, vol.73
, pp. 1649-1651
-
-
Takemura, K.1
Noguchi, T.2
Hase, T.3
Miyasaka, Y.4
-
11
-
-
33750685024
-
-
2 thin film by photochemical metal-organic deposition, Sens. Actuators, A Phys. 132 (2006) 429-433.
-
-
-
-
16
-
-
0033354213
-
9 thin films prepared using triple alkoxides on Pt-passivated Si
-
9 thin films prepared using triple alkoxides on Pt-passivated Si. Jpn. J. Appl. Phys. 38 (1999) 5417-5422
-
(1999)
Jpn. J. Appl. Phys.
, vol.38
, pp. 5417-5422
-
-
Kato, K.1
-
18
-
-
0037011084
-
4 buffer layer
-
4 buffer layer. Thin Solid Films 420-421 (2002) 377-381
-
(2002)
Thin Solid Films
, vol.420-421
, pp. 377-381
-
-
Huang, C.-H.1
Tseng, T.-Y.2
Chien, C.-H.3
Yang, M.-J.4
Leu, C.-C.5
Chang, T.-C.6
Liu, P.-T.7
Huang, T.-Y.8
-
19
-
-
0242691938
-
3-coated silicon by modified sol-gel process
-
3-coated silicon by modified sol-gel process. J. Cryst. Growth 260 (2004) 109-114
-
(2004)
J. Cryst. Growth
, vol.260
, pp. 109-114
-
-
Hu, S.H.1
Hu, G.J.2
Meng, X.J.3
Wang, G.S.4
Sun, J.L.5
Guo, S.L.6
Chu, J.H.7
Dai, N.8
-
20
-
-
0035128342
-
3 sol-gel derived thin films on the ferroelectric properties
-
3 sol-gel derived thin films on the ferroelectric properties. Appl. Surf. Sci. 169-170 (2001) 544-548
-
(2001)
Appl. Surf. Sci.
, vol.169-170
, pp. 544-548
-
-
Yang, J.-K.1
Kim, W.S.2
Park, H.-H.3
-
21
-
-
18744374438
-
Size effect and fatigue mechanism in ferroelectric thin films
-
Jin H.Z., and Zhu J. Size effect and fatigue mechanism in ferroelectric thin films. J. Appl. Phys. 92 (2002) 4594-4598
-
(2002)
J. Appl. Phys.
, vol.92
, pp. 4594-4598
-
-
Jin, H.Z.1
Zhu, J.2
|