Si multicrystals grown by the Czochralski method with multi-seeds

Journal of Crystal Growth

Volumn 307, Issue 2, 2007, Pages 466-471

  Hoshikawa, Takeshi ^a   Taishi, Toshinori ^a   Huang, Xinming ^a   Uda, Satoshi ^a   Yamatani, Muneyoshi ^b   Shirasawa, Katsuhiko ^b   Hoshikawa, Keigo ^c  

^a TOHOKU UNIVERSITY   (Japan)

^b KYOCERA CORPORATION   (Japan)

^c SHINSHU UNIVERSITY   (Japan)

Author keywords

A1. Dislocations; A1. Minority carrier lifetime; A1. Sub grain boundary; A2. Czochralski method; A2. Multicrystal growth; B2. Si crystal

Indexed keywords

CRYSTAL GROWTH FROM MELT; DEFECTS; DISLOCATIONS (CRYSTALS); GRAIN BOUNDARIES; RAW MATERIALS; SILICON;

MINORITY CARRIER LIFETIME; MULTICRYSTAL GROWTH; MULTICRYSTALS; SEMICOHERENT INTERFACES;

SINGLE CRYSTALS;

EID: 34548426561     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2007.06.032     Document Type: Article

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