Behavior of dislocations due to thermal shock in B-doped Si seed in Czochralski Si crystal growth

Journal of Crystal Growth

Volumn 241, Issue 3, 2002, Pages 277-282

  Taishi, Toshinori ^a   Huang, Xinming ^a   Wang, Tiefeng ^a   Yonenaga, Ichiro ^b   Hoshikawa, Keigo ^a  

^a SHINSHU UNIVERSITY   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

Author keywords

A1. Doping; A1. X ray topography; A2. Czochralski method; A2. Seed crystals; A2. Single crystal growth; B2. Semiconducting silicon

Indexed keywords

DISLOCATIONS (CRYSTALS); INTERFACES (MATERIALS); SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SINGLE CRYSTALS; SURFACE TOPOGRAPHY; X RAY ANALYSIS;

THERMAL SHOCKS; X-RAY TOPOGRPAHY;

CRYSTAL GROWTH FROM MELT;

EID: 0036606510     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)01246-0     Document Type: Article

References (10)