Optical and electrical properties of 4H-SiC epitaxial layer grown with HCl addition

Journal of Applied Physics

Volumn 102, Issue 4, 2007, Pages

  Calcagno, L ^a   Izzo, G ^a   Litrico, G ^a   Foti, G ^a   La Via, F ^b   Galvagno, G ^b   Mauceri, M ^c   Leone, S ^c  

^a UNIVERSITY OF CATANIA   (Italy)

^b CNR IMM   (Italy)

^c Epitaxial Technology Center   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

DEEP LEVEL TRANSIENT SPECTROSCOPY; GROWTH RATE; GROWTH TEMPERATURE; LEAKAGE CURRENTS; LUMINESCENCE; OPTICAL MICROSCOPY; SCHOTTKY BARRIER DIODES; SILICON CARBIDE;

COMPLEX DEFECTS; HYDROGEN CHLORIDE;

EPITAXIAL LAYERS;

EID: 34548400741     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2767248     Document Type: Article

References (17)

1. A. Elasser and T. P. Chow, Proc. IEEE 0018-9219 10.1109/JPROC.2002. 1021562 90, 969 (2002).
2. J. R. Waldrop, R. W. Grant, Y. C. Wang, and R. F. Davies, J. Appl. Phys. 0021-8979 10.1063/1.352086 72, 4757 (1992).
3. J. H. Zhao, P. Alexandrov, and X. Li, IEEE Electron Device Lett. 0741-3106 10.1109/LED.2003.813370 24, 402 (2003).
4. A. Veneroni, F. Omarini, M. Masi, S. Leone, M. Mauceri, G. Pistone, and G. Abbondanza, Mater. Sci. Forum 483, 57 (2005).
5. R. Rupp, A. Wiedenhofer, P. Friedrichs, D. Peters, R. Schorner, and D. Stephani, Mater. Sci. Forum 264, 89 (1998).
6. D. Crippa, G. L. Valente, A. Ruggiero, L. Neri, R. Reitano, L. Calcagno, G. Foti, M. Mauceri, S. Leone, G. Pistone, G. Abbondanza, G. Abbagnale, A. Veneroni, F. Omarini, L. Zamolo, M. Masi, F. Roccaforte, F. Giannazzo, S. Di Franco, and F. La Via, Mater. Sci. Forum 483, 67 (2005).
7. R. L. Myers, O. Kordina, S. Rao, R. Everly, and S. E. Saddow, Mater. Sci. Forum 483, 73 (2005).
8. F. Roccaforte, S. Libertino, V. Raineri, A. Ruggiero, V. Massimino, and L. Calcagno, J. Appl. Phys. 0021-8979 10.1063/1.2158501 99, 013515 (2006).
9. H. Fujiwara, T. K. Kimoto, T. Tojo, and H. Matsunami, Mater. Sci. Forum 483, 151 (2005).
10. J. Zhang, L. Storasta, J. P. Bergman, N. T. Son, and E. Jansen, J. Appl. Phys. 0021-8979 10.1063/1.1543240 93, 4708 (2003).
11. C. W. Litton, D. Johnstone, A. Akarca-Biyikli, K. S. Ramaiah, I. Bhat, T. P. Chow, J. K. Kim, and E. F. Schubert, Appl. Phys. Lett. 0003-6951 10.1063/1.2161388 88, 121914 (2006).
12. A. Veneroni and M. Masi, Chem. Vap. Deposition 12, 562 (2006).
13. J. Zhang, L. Storasta, J. Bergman, N. T. Son, and E. Jansen, J. Appl. Phys. 0021-8979 10.1063/1.1543240 93, 4708 (2003).
14. K. Danno, T. Kimoto, and H. Matsunami, Appl. Phys. Lett. 0003-6951 10.1063/1.1886904 86, 122104 (2005).
15. A. Pimpinelli and I. Villain, Physics of Crystal Growth (Cambridge University Press, Cambridge, 1998).
16. L. Storasta, J. P. Bergman, E. Janźn, A. Henry, and J. Lu, J. Appl. Phys. 0021-8979 10.1063/1.1778819 96, 4909 (2004).
17. F. La Via, G. Galvagno, F. Roccaforte, A. Ruggiero, and L. Calcagno, Appl. Phys. Lett. 0003-6951 10.1063/1.2081126 87, 142105 (2005).