GaN films deposited by middle-frequency magnetron sputtering

Applied Surface Science

Volumn 253, Issue 23, 2007, Pages 9077-9080

  Zou, C W ^a   Yin, M L ^a   Li, M ^a   Guo, L P ^a   Fu, D J ^a  

^a WUHAN UNIVERSITY   (China)

Author keywords

GaN; Magnetron sputtering; Middle frequency; Structure

Indexed keywords

CRYSTALLINE MATERIALS; GALLIUM NITRIDE; MAGNETRON SPUTTERING; OPTIMIZATION; SILICON; X RAY DIFFRACTION;

DIFFRACTION INTENSITY; MIDDLE FREQUENCIES;

SEMICONDUCTING FILMS;

EID: 34548215313     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2007.05.037     Document Type: Article

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