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Japanese Journal of Applied Physics, Part 2: Letters

Volumn 43, Issue 2 A, 2004, Pages

GaN Films Deposited by DC Reactive Magnetron Sputtering

(5) Song, Pung Keun a Yoshida, Eriko a Sato, Yasushi a Kim, Kwang Ho b Shigesato, Yuzo a

a AOYAMA GAKUIN UNIVERSITY (Japan)

b Pusan National University (South Korea)

Author keywords

Crystallinity; Ga target; Gallium nitride (GaN); Low temperature deposition; Reactive sputtering

Indexed keywords

GLASS; HEATING; KINETIC ENERGY; MAGNETRON SPUTTERING; MASS SPECTROMETERS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PLASMAS; POLYCRYSTALLINE MATERIALS; THERMOCOUPLES; X RAY DIFFRACTION;

CRYSTALLINITY; GA TARGET; LOW-TEMPERATURE DEPOSITION; REACTIVE SPUTTERING;

GALLIUM NITRIDE;

EID: 1942443686 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.43.l164 Document Type: Article

Times cited : (9)

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