An optimized MEMS-based electrolytic tilt sensor

Sensors and Actuators, A: Physical

Volumn 139, Issue 1-2 SPEC. ISS., 2007, Pages 23-30

  Jung, Ho ^a   Kim, Chang Jin ^a   Kong, Seong Ho ^a  

^a Kyungpook National University   (South Korea)

Author keywords

Electrolyte; MEMS; Shadow mask; Tilt sensor

Indexed keywords

ANISOTROPIC ETCHING; ELECTROCHEMICAL ELECTRODES; ELECTROLYSIS; GOLD; MEMS; POTASSIUM HYDROXIDE; VISCOSITY;

SHADOW-MASK; TILT SENSORS; TILTING MOTION;

OPTICAL SENSORS;

EID: 34548174274     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sna.2006.10.059     Document Type: Article

References (14)

1. Yotter R.A., Baxter R.R., Ohno S., Hawley S.D., and Wilson D.M. On a micromachined fluidic inclinometer. Transducer'03 (2003) 1279-1282
2. S. Billat, H. Glosch, M. Kunze, F. Hedrich, J. Freeh, J. Auber, W. Lang, A Convection-based Micromachined Inclinometer using SOI Technology, in Proc. MEMS Conf. (2001) 159-161.
3. Milanovi V., Bowen E., Tea N., Suehle J., Payne B., Zaghloul M., and Gaitan M. Convection-based accelerometer and tilt sensor implemented in standard CMOS. International Mechanical Engineering Conference and Exposition. MEMS Symposia, November 18 (1998)
4. L. Volker, The Electrochemistry of Silicon : Instrumentaion, Sensors and Applications, Wiley press, (2002).
5. E. Palecek, F. Scheller, J. Wang, Electrochemistry of Nucleic Acids and Proteins, Elsevier, (2005).
6. A. Pandy, L. M. Landsberge, P. M. Kahrizi, Mask-Under-Etch Experiments of Si{110} in TMAH, Proc. of the 1999 IEEE Canadian Conf. on Electrical and Computer Engineering, (1999) 1621-1626.
7. Schröder H., Obermeier E., Horn A., and Wachutka G.K.M. Convex corner undercutting of {100} silicon in anisotropic KOH etching: the new step-flow model of 3-D structuring and first simulation results. J. Microelectromech. Syst. 10 (2001) 88-97
8. Hulrch G. Electrostatic coating of photoresist. Circuit World 12 (1986) 64-67
9. Ichiki M., Zhang L., Yang Z., Ikehara T., and Maeda R. Spray coating fabrication: thin film formation on non-planar surface. Solid-State Sens. Actuators Microsyst. 1 (2003) 825-828
10. Pham N.P., Boellaard E., Wien W., van den Brekel L.D.M., Burghartz J.N., and Sarro P.M. Metal patterning on high topography surface for 3D RF devices fabrication. Sensora Actuators A 115 (2004) 440-443
11. Linder S., Baltes H., Gnaedinger F., and Doering E. Photolithography in anisotropically etched grooves. 9th IEEE MEMS '96 (1996) pp. 38-43
12. F. Larmer, A. Schilp, Method of Anisotropically Etching Silicon, U.S. Patent No. 5501893, DE4241045.
13. Kong S.H., Minami K., and Esashi M. Fabrication of reactive ion etching system for deep silicon machining. Trans. IEE Jpn. 117-E (1997) 10-19
14. de Boer M.J., Gardeniers J.G.E., Jansen H.V., Smulders E., and Gilde M.J. Guidelines for etching silicon MEMS structures using fluorine high-density plasmas at cryogenic temperatures. J. Microelectromech. Syst. 11 (2002) 385-401