A high performance 2.4GHz linear power amplifier in enhancement-mode GaAs pHEMT technology

Conference Proceedings- European Microwave Conference

Volumn 1, Issue , 2004, Pages 5-8

  Chow, Yut Hoong ^a   Chong, Thomas ^a  

^a Wireless Semiconductor Division   (Malaysia)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; DIODES; ELECTRIC POTENTIAL; HIGH ELECTRON MOBILITY TRANSISTORS; LINEARIZATION; LOCAL AREA NETWORKS; ORTHOGONAL FREQUENCY DIVISION MULTIPLEXING; PERMITTIVITY; PERSONAL DIGITAL ASSISTANTS; POWER ELECTRONICS; PRINTED CIRCUIT BOARDS; SEMICONDUCTING GALLIUM COMPOUNDS; SURFACE MOUNT TECHNOLOGY;

COMPLEMENTARY CODE KEYING (CCK) MODULATIONS; DIRECT SEQUENCE SPREAD SPECTRUM (DSSS); ERROR VECTOR MAGNITUDE (EVM); PSEUDOMORPHIC HIGH-ELECTRON-MOBILITY TRANSISTOR (E-PHEMT) TECHNOLOGY;

POWER AMPLIFIERS;

EID: 18744381876     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)

1. Wu et al, "An Enhancement-Mode pHEMT for Single-Supply Power Amplifiers", HP Journal, Feb 1998, pp39-51.
2. P. R. Gray et al, " Analysis and Design of Analog Integrated Circuits," 4ed, pp 308-309, Wiley, 2001.
3. D E Root, S Fan, J Meyer, "Technology-independent large-signal non-quasi-static FET models by direct construction from automatically characterized device data", 21st EuMC, 927-932 (1991)