Single-voltage-supply highly efficient E/D dual-gate pseudomorphic double-hetero HEMT's with platinum buried gates

IEEE Transactions on Electron Devices

Volumn 45, Issue 6, 1998, Pages 1176-1182

  Tanimoto, Takuma ^a   Ohbu, Isao ^a   Tanaka, Satoshi ^a   Kawai, Akie ^a   Kudo, Makoto ^a   Terano, Akihisa ^a   Nakamura, Tohru ^a  

^a HITACHI LTD   (Japan)

Author keywords

Dual gate; FET; HEMT; HPA; Pseudomorphic; Single biasing

Indexed keywords

AMPLIFIERS (ELECTRONIC); GAIN MEASUREMENT; GATES (TRANSISTOR); SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR SUPERLATTICES;

HIGH POWER LINEAR AMPLIFIERS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0032098558     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.678503     Document Type: Article

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