A high efficiency, high voltage, balanced cascode FET

IEEE MTT-S International Microwave Symposium Digest

Volumn 2005, Issue , 2005, Pages 669-672

  Inoue, Akira ^a   Goto, Seiki ^a   Kunii, Tetsuo ^a   Ishikawa, Takahide ^a   Matsuda, Yoshio ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

FET circuits; FETs; High voltage techniques; Microwave amplifiers; Power amplifiers

Indexed keywords

CAPACITORS; ELECTRIC BREAKDOWN; FEEDBACK AMPLIFIERS; MICROWAVE AMPLIFIERS; OPTIMIZATION;

BALANCED CAPACITOR; CASCODE CIRCUITS; HIGH VOLTAGE TECHNIQUES;

FIELD EFFECT TRANSISTORS;

EID: 33749264093     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MWSYM.2005.1516694     Document Type: Conference Paper

References (5)

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