Large-area and high-speed deposition of microcrystalline silicon film by inductive coupled plasma using internal low-inductance antenna

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 46, Issue 3 B, 2007, Pages 1280-1285

  Takahashi, Eiji ^a   Nishigami, Yasuaki ^a   Tomyo, Atsushi ^a   Fujiwara, Masaki ^a   Kaki, Hirokazu ^a   Kubota, Kiyoshi ^a   Hayashi, Tsukasa ^a   Ogata, Kiyoshi ^a   Ebe, Akinori ^b   Setsuhara, Yuichi ^c  

^a NISSIN ELECTRIC CO LTD   (Japan)

^b EMD Corp   (Japan)

^c OSAKA UNIVERSITY   (Japan)

Author keywords

C Si; ICP; LCD; PECVD; Standing wave effect; TFT

Indexed keywords

FILM THICKNESS; INDUCTIVELY COUPLED PLASMA; LIQUID CRYSTAL DISPLAYS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RAMAN SPECTROSCOPY; THIN FILM TRANSISTORS; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

INCUBATION LAYER; LOW-INDUCTANCE ANTENNA; STANDING-WAVE EFFECT;

MICROCRYSTALLINE SILICON;

EID: 34547902910     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.1280     Document Type: Article

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