Melting and solidification of microcrystalline Si films induced by semiconductor diode laser irradiation

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 46, Issue 3 B, 2007, Pages 1276-1279

  Sakaike, Kohei ^a   Higashi, Seiichiro ^a   Kaku, Hirotaka ^a   Murakami, Hideki ^a   Miyazaki, Seiichi ^a  

^a HIROSHIMA UNIVERSITY   (Japan)

Author keywords

Crystallization; Microcrystalline Si; Polycrystalline Si; Rapid thermal annealing; Semiconductor diode laser

Indexed keywords

AMORPHOUS SILICON; ANNEALING; LASER BEAM EFFECTS; MELTING; MICROCRYSTALLINE SILICON; POLYSILICON; SOLIDIFICATION; THIN FILMS; VOLUME FRACTION;

ABSORPTION COEFFICIENT; LASER SCANNING DIRECTION;

SEMICONDUCTOR DIODES;

EID: 34547895169     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.1276     Document Type: Article

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