The application of very high frequency inductively coupled plasma to high-rate growth of microcrystalline silicon films

Journal of Non-Crystalline Solids

Volumn 352, Issue 9-20 SPEC. ISS., 2006, Pages 911-914

  Kosku, Nihan ^a   Miyazaki, Seiichi ^a  

^a HIROSHIMA UNIVERSITY   (Japan)

Author keywords

Crystal growth; Microcrystallinity; Nanocrystals; Nucleation; Optical spectroscopy; Plasma deposition; Raman spectroscopy; Silicon

Indexed keywords

CRYSTAL GROWTH; DISSOCIATION; GAS EMISSIONS; HYDROGEN; NANOSTRUCTURED MATERIALS; NUCLEATION; PLASMAS; RAMAN SPECTROSCOPY; SILICON;

GAS DISSOCIATION; GAS PRESSURE; INDUCTIVELY COUPLED PLASMA (ICP); MICROCRYSTALLINITY; OPTICAL SPECTROSCOPY; PLASMA DEPOSITION; SILICON FILMS;

FILM GROWTH;

EID: 33745464790     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnoncrysol.2005.11.125     Document Type: Article

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