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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 11, 2006, Pages 8829-8831

Room-temperature electrical-field induced oxygen diffusion of aluminum/yttria-stabilized zirconia thin film grown on Si substrate

(6) Wakiya, Naoki a Tajiri, Naoya a Kiguchi, Takanori a Mizutani, Nobuyasu b Cross, Jeffrey S c Shinozaki, Kazuo a

a TOKYO INSTITUTE OF TECHNOLOGY (Japan)

b TOKYO NATIONAL COLLEGE OF TECHNOLOGY (Japan)

c FUJITSU LABORATORIES LTD (Japan)

Author keywords

DC current measurements; Film; Oxygen diffusion; Yttria stabilized zlrconia

Indexed keywords

ELECTRIC CURRENT MEASUREMENT; FILM GROWTH; REDOX REACTIONS; SECONDARY ION MASS SPECTROMETRY; SILICON; SUBSTRATES; X RAY PHOTOELECTRON SPECTROSCOPY; YTTRIA STABILIZED ZIRCONIA;

DC CURRENT MEASUREMENTS; INTERFACE REACTION; OXYGEN DIFFUSION;

THIN FILMS;

EID: 34547893878 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.45.8827 Document Type: Article

Times cited : (2)

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