P-Type floating gate for retention and P/E window improvement of flash memory devices

IEEE Transactions on Electron Devices

Volumn 54, Issue 8, 2007, Pages 1910-1917

  Shen, Chen ^a   Pu, Jing ^a   Li, Ming Fu ^a   Cho, Byung Jin ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

Coupling ratio (CR); Electrically erasable programmable read only memory (EEPROM); Flash memory; Floating gate; P type; Retention

Indexed keywords

CAPACITANCE; CELLULAR ARRAYS; ROM; WINDOWS OPERATING SYSTEM;

CHARGE RETENTION; COUPLING RATIO; ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY (EEPROM); FLOATING GATE;

FLASH MEMORY;

EID: 34547883096     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2007.900680     Document Type: Article

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