Novel high performance and reliability p-type floating gate N-channel flash EEPROM

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 1999, Pages 19-20

  Chung, S S ^a   Yih, C M ^a   Liaw, S T ^a   Ho, Z H ^a   Wu, S S ^a   Lin, C J ^b   Kuo, D S ^a   Liang, M S ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CURRENT VOLTAGE CHARACTERISTICS; ELECTRON TUNNELING; FERMI LEVEL; GATES (TRANSISTOR); PERFORMANCE; RELIABILITY; SILICONES; THRESHOLD VOLTAGE;

CHANNEL HOT ELECTRON INJECTION; FLOATING GATE; N-CHANNEL FLASH MEMORY CELL; P-TYPE POLYSILICON;

PROM;

EID: 0033280709     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)