Fast nanoimprint thermal lithography using a heated high-aspect ratio mold

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 45, Issue 46-50, 2006, Pages

  Nakada, Yoshinobu ^a   Ninomlya, Kenrou ^a   Takaki, Yasuhiro ^a  

^a TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

Author keywords

High throughput; LSI; MEMS; Nanoimprint lithography

Indexed keywords

ASPECT RATIO; GLASS TRANSITION; LSI CIRCUITS; MEMS; SILICON CARBIDE;

DOT PATTERN; MOLD PRESS TIME;

NANOIMPRINT LITHOGRAPHY;

GLASS TRANSITION TEMPERATURE; LITHOGRAPHY; SILICON CARBIDE;

EID: 34547869624     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.L1241     Document Type: Article

References (8)

1. C. Vieu, F. Carcenac, A. Pepin, Y. Chen, M. Mejias, A. Lebib, L. Manin-Ferlazzo, L. Couraud and H. Launois: Appl. Surf. Sci. 164 (2000) 111.
2. S. Y. Chou, P. R. K. Krauss and P. J. Renstrom: J. Vac. Sci. Technol. B 14 (1996) 4129.
3. N. Bogdanski, M. Wissen, A. Ziegler and H.-C. Scheer: Microelectron. Eng. 78-79 (2005) 598.
4. M. Komuro, J. Taniguchi, S. Inoue, N. Kimura, Y. Tokano, H. Hiroshima and S. Matsui: Jpn. J. Appl. Phys. 39 (2000) 7075.
5. M. Bender, M. Otto, B. Hadam, B. Spangenberg and H. Kurz: Microelectron. Eng. 53 (2000) 233.
6. X. Fan, H. Zhang, S. Liua, X. Hu and K. Jia: Microelectron. Eng. 77 (2005) 1.
7. T. Ohta, M. Hennessey, D. Strand, D. Jablonski, B. Walton and B. Clark: Abstr. NNT05, Nara, 2005, 21A-9-2.
8. K. Nakamatsu, K. Watanabe, K. Tone, T. Katase, W. Hattori, Y. Ochiai, T. Matsuo, M. Sasago, H. Namatsu, M. Komuro and S. Matsui: Jpn. J. Appl. Phys. 43 (2004) 4050.