Formation of single-crystal silicon layers on insulator islands using selective epitaxial growth and laser crystallization

Proceedings - Electrochemical Society

Volumn PV 2005-03, Issue , 2005, Pages 243-248

  Cho, Hans S ^a   Xianyu, Wenxu ^a   Zhang, Xiaoxin ^a   Yin, Huaxiang ^a   Kim, Do Young ^a   Park, Kyung Bae ^a   Kwon, Jang Yeon ^a   Noguchi, Takashi ^a,b  

^a Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^b Sungkyunkwan University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLIZATION; ELECTRIC INSULATORS; EPITAXIAL GROWTH; EXCIMER LASERS; LASER APPLICATIONS; SILICON; WSI CIRCUITS;

INSULATOR ISLANDS; LLASER PULSES; ULTRHIGH VACUUM;

SINGLE CRYSTALS;

EID: 31844440694     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)

1. H.W. Lam et al, J. Electrochemical Soc. 128, 1981, (1981)
2. Jean-Pierre Colinge, Silicon-on-Insulator Technology: Materials to VLSI, Kluwer Academic Publishers (1991)
3. S-M Jung et al, VLSI Symp. Tech. Digest, 228, (2004)
4. Donggun Park et al, ICSICT '04 Tech Digest, A1.4 (2004)
5. Kinam Kim and Gwanhyeob Koh, ICSICT '04 Tech. Digest, C2.1 (2004)
6. J.S. Im et al, phys. stat. sol. (a) 166, 603 (1998)
7. R.S. Sposili and J.S. Im, Appl. Phys. Lett., 69, no. 19, 2864-2866, (1996)
8. th IDW Conference, AMD5-4, 315, (2004)
9. A. Cröll et al., Cryst. Res. Technol. 38, no. 7-8, 669-675 (2003)
10. th IDW Conference, AMDp-11, 423, (2004)