Effect of source materials on film thickness and compositional uniformity of MOCVD-P(Zr,Ti)O3 films

Surface and Coatings Technology

Volumn 201, Issue 22-23 SPEC. ISS., 2007, Pages 9279-9284

  Funakubo, Hiroshi ^a   Nagai, Atsushi ^a   Asano, Gouji ^a   Koo, June Mo ^b   Shin, Sang Min ^b   Park, Youngsoo ^b  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

MOCVD; Pb(Zr,Ti)O3; Source material dependence; Step coverage

Indexed keywords

CONFORMATIONS; DEPOSITION RATES; FILM THICKNESS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; THIN FILMS;

SOURCE MATERIAL; STEP COVERAGE;

SEMICONDUCTING LEAD COMPOUNDS;

CONFORMATIONS; DEPOSITION RATES; FILM THICKNESS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING LEAD COMPOUNDS; THIN FILMS;

EID: 34547691570     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.surfcoat.2007.04.114     Document Type: Article

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