SrTiO3-SiO2 oxide films for possible high-k gate dielectric applications

Thin Solid Films

Volumn 515, Issue 20-21, 2007, Pages 8005-8008

  Lin, Chun Chieh ^a   Lai, Li Wen ^a   Lin, Chih Yang ^a   Tseng, Tseung Yuen ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Dielectric constant; Gate oxide; High k; Leakage current

Indexed keywords

AMORPHOUS FILMS; CRYSTAL STRUCTURE; DEPOSITION; GATE DIELECTRICS; STRONTIUM COMPOUNDS; SURFACE MORPHOLOGY; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

CHEMICAL BONDING CONFIGURATION; DEPTH PROFILE; GATE OXIDES; HIGH-K;

THIN FILMS;

EID: 34547679517     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2006.03.054     Document Type: Article

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