Optical properties of nanocrystalline silicon deposited by PECVD

Journal of Materials Science: Materials in Electronics

Volumn 18, Issue SUPPL. 1, 2007, Pages 405-409

  Esmaeili Rad, M R ^a   Sazonov, A ^a   Kazanskii, A G ^b   Khomich, A A ^b   Nathan, A ^c  

^a UNIVERSITY OF WATERLOO   (Canada)

^b MOSCOW STATE UNIVERSITY   (Russian Federation)

^c UNIVERSITY COLLEGE LONDON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; AMORPHOUS SILICON; MICROSTRUCTURE; OPTICAL BAND GAPS; OPTICAL PROPERTIES; PHOTOCURRENTS; PHOTOSENSITIVITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RAMAN SPECTROSCOPY;

PHOTOCURRENT SPECTRA; SILANE PLASMA;

NANOCRYSTALLINE SILICON;

EID: 34547600620     PISSN: 09574522     EISSN: 1573482X     Source Type: Journal    
DOI: 10.1007/s10854-007-9230-8     Document Type: Conference Paper

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