Low-temperature crystallization of amorphous silicon by atmospheric-pressure plasma treatment in H2/He or H2/Ar mixture

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 10 B, 2006, Pages 8488-8493

  Ohmi, Hiromasa ^a   Kakiuchi, Hiroaki ^a   Nishijima, Kenichi ^a   Watanabe, Heiji ^a   Yasutake, Kiyoshi ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

Atmospheric pressure plasma; Atomic hydrogen; Crystallization; Low temperature; Nucleation; Polycrystalline silicon film

Indexed keywords

ATMOSPHERIC PRESSURE; CRYSTALLIZATION; HIGH ENERGY ELECTRON DIFFRACTION; OPTICAL EMISSION SPECTROSCOPY; PLASMA APPLICATIONS; SCANNING ELECTRON MICROSCOPY;

ATOMIC HYDROGEN; FILM PEELING; PLASMA TREATMENT; SUBSTRATE TEMPERATURE;

AMORPHOUS SILICON;

EID: 34547599858     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.8488     Document Type: Article

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