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Volumn 102, Issue 2, 2007, Pages

A molecular dynamics study of nanoindentation of amorphous silicon carbide

Author keywords

[No Author keywords available]

Indexed keywords

LIQUID METAL SURFACES; NANOINDENTATION DAMAGE; SYSTEM GEOMETRY;

EID: 34547596049     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2756059     Document Type: Article
Times cited : (38)

References (99)
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    • The schedule for preparing an amorphous model was shown to be important [W. D. Luedtke and U. Landman, Phys. Rev. B 0163-1829 10.1103/PhysRevB.40.1164 40, 1164 (1989)] for the quality of the resulting structure. Our previous MD simulations of amorphous SiC [J. P. Rino, I. Ebbsjo, P. S. Branicio, R. K. Kalia, A. Nakano, F. Shimojo, and P. Vashishta, Phys. Rev. B 0163-1829 10.1103/PhysRevB.70.045207 70, 045207 (2004)], Si O2 [A. Nakano, R. K. Kalia, and P. Vashishta, J. Non-Cryst. Solids 0022-3093 10.1016/0022-3093(94)90351-4 171, 157 (1994)], and Si3 N4 [P. Vashistha, R. Kalia, and I. Ebbsjö, Phys. Rev. Lett. 75, 858 (1995)] have shown that the melt-quench method using the interatomic potential scheme in the present paper provides high-quality amorphous structures that are in excellent agreement with neutron and x-ray scattering measurements.
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    • The schedule for preparing an amorphous model was shown to be important [W. D. Luedtke and U. Landman, Phys. Rev. B 0163-1829 10.1103/PhysRevB.40.1164 40, 1164 (1989)] for the quality of the resulting structure. Our previous MD simulations of amorphous SiC [J. P. Rino, I. Ebbsjo, P. S. Branicio, R. K. Kalia, A. Nakano, F. Shimojo, and P. Vashishta, Phys. Rev. B 0163-1829 10.1103/PhysRevB.70.045207 70, 045207 (2004)], Si O2 [A. Nakano, R. K. Kalia, and P. Vashishta, J. Non-Cryst. Solids 0022-3093 10.1016/0022-3093(94)90351-4 171, 157 (1994)], and Si3 N4 [P. Vashistha, R. Kalia, and I. Ebbsjö, Phys. Rev. Lett. 75, 858 (1995)] have shown that the melt-quench method using the interatomic potential scheme in the present paper provides high-quality amorphous structures that are in excellent agreement with neutron and x-ray scattering measurements.
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    • The schedule for preparing an amorphous model was shown to be important [W. D. Luedtke and U. Landman, Phys. Rev. B 0163-1829 10.1103/PhysRevB.40.1164 40, 1164 (1989)] for the quality of the resulting structure. Our previous MD simulations of amorphous SiC [J. P. Rino, I. Ebbsjo, P. S. Branicio, R. K. Kalia, A. Nakano, F. Shimojo, and P. Vashishta, Phys. Rev. B 0163-1829 10.1103/PhysRevB.70.045207 70, 045207 (2004)], Si O2 [A. Nakano, R. K. Kalia, and P. Vashishta, J. Non-Cryst. Solids 0022-3093 10.1016/0022-3093(94)90351-4 171, 157 (1994)], and Si3 N4 [P. Vashistha, R. Kalia, and I. Ebbsjö, Phys. Rev. Lett. 75, 858 (1995)] have shown that the melt-quench method using the interatomic potential scheme in the present paper provides high-quality amorphous structures that are in excellent agreement with neutron and x-ray scattering measurements.
    • (1994) J. Non-Cryst. Solids , vol.171 , pp. 157
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    • The schedule for preparing an amorphous model was shown to be important [W. D. Luedtke and U. Landman, Phys. Rev. B 0163-1829 10.1103/PhysRevB.40.1164 40, 1164 (1989)] for the quality of the resulting structure. Our previous MD simulations of amorphous SiC [J. P. Rino, I. Ebbsjo, P. S. Branicio, R. K. Kalia, A. Nakano, F. Shimojo, and P. Vashishta, Phys. Rev. B 0163-1829 10.1103/PhysRevB.70.045207 70, 045207 (2004)], Si O2 [A. Nakano, R. K. Kalia, and P. Vashishta, J. Non-Cryst. Solids 0022-3093 10.1016/0022-3093(94)90351-4 171, 157 (1994)], and Si3 N4 [P. Vashistha, R. Kalia, and I. Ebbsjö, Phys. Rev. Lett. 75, 858 (1995)] have shown that the melt-quench method using the interatomic potential scheme in the present paper provides high-quality amorphous structures that are in excellent agreement with neutron and x-ray scattering measurements.
    • (1995) Phys. Rev. Lett. , vol.75 , pp. 858
    • Vashistha, P.1    Kalia, R.2    Ebbsjö, I.3
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    • Ph.D. thesis, Louisiana State University
    • This is the first step to systematically study nanoindentation of SiC, in which various physical effects are introduced step by step to discern their consequences. The second step will introduce the nonrigidity of the indenter, and the third to include attractive indenter-substrate interactions. We have applied such a systematic simulation procedure to nanoindentation in Si3 N4 (P. Walsh, Ph.D. thesis, Louisiana State University, 1999).
    • (1999)
    • Walsh, P.1


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