SCOPUS 정보 검색 플랫폼

Optical Materials

Volumn 23, Issue 1-2, 2003, Pages 113-116

SiC heteroepitaxial growth by low pressure chemical vapor deposition on Si(1 1 1) substrates

(5) Yan, F a Zheng, Y D a Chen, P a Sun, L a Gu, S L a

a NANJING UNIVERSITY (China)

Author keywords

Heteroepitaxial growth; Low pressure chemical vapor deposition (LPCVD); Silicon carbide (SiC)

Indexed keywords

ATOMIC FORCE MICROSCOPY; AUGER ELECTRON SPECTROSCOPY; CHEMICAL VAPOR DEPOSITION; COMPOSITION; EPITAXIAL GROWTH; ETHANE; FILM GROWTH; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HYDROGEN; MORPHOLOGY; PRESSURE EFFECTS; SILANES; SILICON; SINGLE CRYSTALS; STOICHIOMETRY; THERMAL EFFECTS;

HETEROEPITAXIAL GROWTH;

SILICON CARBIDE;

EID: 0038010649 PISSN: 09253467 EISSN: None Source Type: Journal
DOI: 10.1016/S0925-3467(03)00070-3 Document Type: Conference Paper

Times cited : (9)

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