Characterization of silicon-germanium heterojunction bipolar transistors degradation in silicon-germanium BiCMOS technologies

Solid-State Electronics

Volumn 50, Issue 3, 2006, Pages 333-339

  Lee, Seung Yun ^a   Park, Chan Woo ^b  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^b Korea Basic Science Institute (KBSI)   (South Korea)

Author keywords

BiCMOS; Degradation; Heterojunction bipolar transistor (HBT); Silicon germanium (SiGe)

Indexed keywords

BORON; CMOS INTEGRATED CIRCUITS; DEGRADATION; GERMANIUM; POLYSILICON; SILICON;

BICMOS; BORON DIFFUSION; GATE POLY-SILICON; SILICON-GERMANIUM (SIGE);

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 33646497652     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2006.01.010     Document Type: Article

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