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Volumn 66, Issue SUPPL. 1, 1998, Pages
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Crystallization of ion-beam-synthesized SiC layer by thermal annealing
a
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Author keywords
[No Author keywords available]
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Indexed keywords
ABSORPTION PEAKS;
AFM;
ANNEALING TEMPERATURES;
AVERAGE GRAIN SIZE;
CARBON DISTRIBUTION;
CARBON ION BEAMS;
COLUMNAR GRAIN;
FURNACE ANNEALING;
GRAIN SIZE;
HIGH DOSE;
IMPLANTED SAMPLES;
ION IMPLANTATION ENERGY;
NANOCRYSTALLINES;
RUTHERFORD BACKSCATTERING SPECTROMETRY;
SAMPLE SURFACE;
SI-C BOND;
THERMAL-ANNEALING;
ABSORPTION SPECTROSCOPY;
ANNEALING;
CRYSTALLIZATION;
FULL WIDTH AT HALF MAXIMUM;
GRAIN SIZE AND SHAPE;
INFRARED SPECTROSCOPY;
ION BEAMS;
ION BOMBARDMENT;
ION IMPLANTATION;
MORPHOLOGY;
RUTHERFORD BACKSCATTERING SPECTROSCOPY;
SILICON CARBIDE;
SILICON WAFERS;
SYNTHESIS (CHEMICAL);
SEMICONDUCTING SILICON COMPOUNDS;
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EID: 34547560273
PISSN: 09478396
EISSN: 14320630
Source Type: Journal
DOI: 10.1007/s003390051198 Document Type: Article |
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Times cited : (6)
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References (21)
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