XTEM and IR absorption analysis of silicon carbide prepared by high temperature carbon implantation in silicon

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 112, Issue 1-4, 1996, Pages 330-333

  Simon, L ^a   Faure J ^b   Mesli, A ^a   Heiser, T ^a   Grob, J J ^a   Balladore, J L ^a  

^a Faculté de Médecine   (France)

^b Lab de Microscopie Electronique   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; INFRARED SPECTROSCOPY; ION IMPLANTATION; SEMICONDUCTING SILICON; SYNTHESIS (CHEMICAL); TRANSMISSION ELECTRON MICROSCOPY;

CROSS SECTIONAL TRANSMISSION ELECTRON MICROSCOPY; POST IMPLANTATION ANNEALING;

SILICON CARBIDE;

EID: 0030563530     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/0168-583X(95)01284-2     Document Type: Article

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